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IRFR3709Z - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤6.5mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IRFR3709Z, IIRFR3709Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency Synchronous Buck Converters For Computer Processor Power ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 86 IDM Drain Current-Single Pulsed 340 PD Total Dissipation @TC=25℃ 79 Tj Max.
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