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IRFR9024N - P-Channel MOSFET

Datasheet Summary

Features

  • Static drain-source on-resistance: RDS(on)≤175mΩ(@VGS= -10V; ID= -6.6A).
  • Advanced trench process technology.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRFR9024N

Datasheet Details

Part number IRFR9024N
Manufacturer INCHANGE
File Size 260.32 KB
Description P-Channel MOSFET
Datasheet download datasheet IRFR9024N Datasheet
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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤175mΩ(@VGS= -10V; ID= -6.6A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -11 A PD Total Dissipation @TC=25℃ 28 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 3.3 ℃/W IRFR9024N isc website：www.iscsemi.
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