Download IRFR9024N Datasheet PDF
Inchange Semiconductor
IRFR9024N
FEATURES - Static drain-source on-resistance: RDS(on)≤175mΩ(@VGS= -10V; ID= -6.6A) - Advanced trench process technology - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - Fast switching application. - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -55 Gate-Source Voltage ±20 Drain Current-Continuous -11 Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER UNIT...