IRFS38N20D - TO-262 N-Channel MOSFET

Inchange Semiconductor

Key Features

With To-262 package.
Low input capacitance and gate charge.
Low gate input resistance.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IRFS38N20D to-262 n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IRFS38N20D
Manufacturer	Inchange Semiconductor
File Size	251.83 KB
Description	TO-262 N-Channel MOSFET
Datasheet	IRFS38N20D Datasheet

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Full PDF Text Transcription (Reference)

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGSS Gate-Source Voltage ±30 V ID Drain Current-ContinuousTc=25℃ Tc=100℃ 43 30 A IDM Drain Current-Single Pulsed 180 A PD Total Dissipation @TC=25℃ 300 W Tch Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.47 UNIT ℃/W IRFS38N20D isc website：www.iscsemi.