Datasheet Details
| Part number | IRFS7534TRLPBF |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.37 KB |
| Description | N-Channel MOSFET |
| Datasheet | IRFS7534TRLPBF-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor IRFS7534TRLPBF.
| Part number | IRFS7534TRLPBF |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.37 KB |
| Description | N-Channel MOSFET |
| Datasheet | IRFS7534TRLPBF-INCHANGE.pdf |
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·Drain Current –ID=232 A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Improved Gate, Avalanche and Dynamic dV/dt Ruggedness · Fully Characterized Capacitance and Avalanche SOA · Enhanced body diode dV/dt and dI/dt Capability · Lead-Free, RoHS Compliant ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 232 A Ptot Total Dissipation@TC=25℃ 294 W Tj Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~175 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.51 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS;
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