Datasheet4U Logo Datasheet4U.com

IRFSL31N20D - N-Channel MOSFET

Key Features

  • With To-262 package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFSL31N20D Power MOSFET IRF
IRFSL31N20DPBF Power MOSFET International Rectifier
IRFSL3107PbF Power MOSFET International Rectifier
IRFSL3004PBF Power MOSFET International Rectifier
IRFSL3006PbF Power MOSFET International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number Description
IRFSL3107PbF N-Channel MOSFET
IRFSL33N15D N-Channel MOSFET
IRFSL38N20D N-Channel MOSFET
IRFSL23N15D N-Channel MOSFET
IRFSL23N20D N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 31 21 124 PD Total Dissipation @TC=25℃ 200 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.05 UNIT ℃/W IRFSL31N20D isc website：www.iscsemi.