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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFSL4115
·FEATURES ·With TO-262 packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
150
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous@TC=25℃ TC=100℃
99 70
A
IDM
Drain Current-Single Pulsed
396
A
PD
Total Dissipation
375
W
Tj
Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c) Channel-to-case thermal resistance
0.