Datasheet4U Logo Datasheet4U.com

IRFSL4227 - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤22mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFSL4227PbF PDP SWITCH International Rectifier
IRFSL4228PbF PDP SWITCH International Rectifier
IRFSL42N20D (IRFx42N20D) High frequency DC-DC converters International Rectifier
IRFSL4010PbF Power MOSFET International Rectifier
IRFSL4020PbF Digital Audio MOSFET International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number Description
IRFSL4020PBF N-Channel MOSFET
IRFSL4115 N-Channel MOSFET
IRFSL4127 N-Channel MOSFET
IRFSL4310 N-Channel MOSFET
IRFSL4321 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 62 A IDM Drain Current-Single Pulsed 260 A PD Total Dissipation @TC=25℃ 330 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -40~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 0.45 UNIT ℃/W IRFSL4227 isc website：www.iscsemi.