Download IRFSL4310 Datasheet PDF
Inchange Semiconductor
IRFSL4310
FEATURES - Static drain-source on-resistance: RDS(on) ≤7.0mΩ - Enhancement mode - Fast Switching Speed - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - reliable device for use in a wide variety of applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage Gate-Source Voltage ±20 Drain Current-Continuous Drain Current-Single Pulsed Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER UNIT Rth(ch-c) Channel-to-case thermal resistance ℃/W...