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IRFU1N60A Datasheet Preview

IRFU1N60A Datasheet

N-Channel MOSFET

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iscN-Channel MOSFET Transistor
IRFU1N60A
·FEATURES
·Low drain-source on-resistance:
RDS(ON) =7(MAX)
·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
1.4
A
IDM
Drain Current-Single Pulsed
5.6
A
PD
Total Dissipation @TC=25
36
W
Tj
Max. Operating Junction Temperature -55~150
Tstg
Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX
3.5
UNIT
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

IRFU1N60A Datasheet Preview

IRFU1N60A Datasheet

N-Channel MOSFET

No Preview Available !

iscN-Channel MOSFET Transistor
IRFU1N60A
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
600
V
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=0.25mA
2.0
4.0
V
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=0.84A
7
Ω
IGSS
IDSS
VSDF
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
Drain-Source Leakage Current
VDS=600V; VGS= 0V
VDS=480V; VGS= 0V;TJ=125
Diode forward voltage
IDR =1.4A, VGS = 0 V
±100 nA
25
250
uA
1.6
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number IRFU1N60A
Description N-Channel MOSFET
Maker INCHANGE
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