Full PDF Text Transcription for IRFU220N (Reference)
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IRFU220N. For precise diagrams, and layout, please refer to the original PDF.
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100...
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·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRFU220N ·APPLICATIONS ·Switching applications ·DC-DC converters ·High frequency ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 5.0 3.