IRL7833 - N-Channel MOSFET

Datasheet Summary

Features

br>.
Static drain-source on-resistance: RDS(on) ≤3.8mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	IRL7833
Manufacturer	INCHANGE
File Size	241.91 KB
Description	N-Channel MOSFET
Datasheet	IRL7833 Datasheet
Additional preview pages of the IRL7833 datasheet.

📁 Similar Datasheet

IRL7833 - Power MOSFET (International Rectifier)
IRL7833L - Power MOSFET (International Rectifier)
IRL7833LPbF - Power MOSFET (International Rectifier)
IRL7833PbF - Power MOSFET (International Rectifier)
IRL7833S - Power MOSFET (International Rectifier)
IRL7833SPbF - Power MOSFET (International Rectifier)
IRL7472L1 - Power MOSFET (Infineon)
IRL7472L1PbF - N-Channel Power MOSFET (International Rectifier)
IRL7472L1TRPbF - Power MOSFET (Infineon)
IRL7472L1TRPbF - N-Channel Power MOSFET (International Rectifier)

Other Datasheets by INCHANGE

IRL7833S - N-Channel MOSFET
IRL1004 - N-Channel MOSFET
IRL1004S - N-Channel MOSFET
IRL1404 - N-Channel MOSFET
IRL1404S - N-Channel MOSFET
IRL1404Z - N-Channel MOSFET
IRL2203N - N-Channel MOSFET
IRL2203NS - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL7833，IIRL7833 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.8mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 150 IDM Drain Current-Single Pulsed 600 PD Total Dissipation @TC=25℃ 140 Tj Max.

Published: Oct 3, 2020 |