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IRLML6402 Datasheet P-Channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc P-Channel MOSFET Transistor INCHANGE Semiconductor IRLML6402.

General Description

·Ultra low on-resistance ·P-Channel MOSFET ·SOT-23 Footprint ·Available in tape and reel ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=37℃ IDM Drain Current Pulse Total Dissipation@TA=25℃ Ptot Total Dissipation@TA=75℃ Tj Max.

Operating Junction Temperature Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Thermal Resistance,Junction to Ambient VALUE -20 ±12 -3.7 -30 1.3 0.8 -55~150 -55~150 UNIT V V A A W W ℃ ℃ MAX 100 UNIT ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel Mosfet Transistor INCHANGE Semiconductor IRLML6402 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

ID= -0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS;

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