Inchange Semiconductor ISCNH060D
N-Channel MOSFET Transistor
| Part No. | ISCNH060D |
|---|---|
| Datasheet | ISCNH060D Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current : ID= 100A@ TC=25℃●Drain Source Voltage : VDSS= 100V(Min)
●Static Drain-Source On-Resistance : RDS(on) <6mΩ(Max) @ VGS= 10V
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRIPTION
●motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 100 A PD Total Dissipation @TC=25℃ 90 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.67 UNIT ℃/W ISCNH060D isc website： isc & iscsemi is registered trademark 1 N-Channel MOSFET TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGS...