ISCNH377B Datasheet PDF

Inchange Semiconductor ISCNH377B

iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 0.25mA VDS= 10V; ID= 0.25mA VGS= 10V; ID= 100A VGS= ±20V;VDS= 0 VDS= 100V; VGS= 0 IS= 100A; VGS= 0 ISCNH377B MIN MAX UNIT 100 -- V 2.0 4.0 V -- 2.3 mΩ -- ±0.1 uA -- 1.0 uA -- 1.2 V NOTICE： ISC reserves the rights to make changes of the... The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.