Inchange Semiconductor IXFP18N60X
N-Channel MOSFET
| Part No. | IXFP18N60X |
|---|---|
| Datasheet | IXFP18N60X Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Static drain-source on-resistance: RDS(on) ≤ 230mΩ@VGS=10V●Fully characterized avalanche voltage and current
●100% Avalanche Tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●APPLICATION
●Switched mode power supplies
●DC-DC converters
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 36 PD Total Dissipation @TC=25℃ 320 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.39 UNIT ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS= 0V; ID = 250μA VGS(th) Gate Threshold Voltage VDS= VGS; ID = 1.5mA RDS(on) Drain-So...