Inchange Semiconductor IXFP8N65X2
N-Channel MOSFET
| Part No. | IXFP8N65X2 |
|---|---|
| Datasheet | IXFP8N65X2 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Drain Source Voltage- : VDSS= 650V(Min)●Static drain-source on-resistance: RDS(on) ≤ 450mΩ@VGS=10V
●Fully characterized avalanche voltage and current
●100% Avalanche Tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●APPLICATION
●Switched mode power supplies
●DC-DC converters
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 8 IDM Drain Current-Single Pulsed 16 PD Total Dissipation @TC=25℃ 150 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Junction-to-case thermal resistance 0.83 ℃/W IXFP8N65X2 isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS= 0V; ID = 250μA VGS(th) Gate Thre...