IXTA120N075T2 mosfet equivalent, n-channel mosfet.
*Static drain-source on-resistance:
RDS(on) ≤ 7.7mΩ@VGS=10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable o.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
75
VGS
Gate-Source Volta.
Image gallery
Download