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IXTC200N085T Datasheet, INCHANGE

IXTC200N085T mosfet equivalent, n-channel mosfet.

IXTC200N085T Avg. rating / M : 1.0 rating-12

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IXTC200N085T Datasheet

Features and benefits


*Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable o.

Application


*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 85 VGS Gate-Source Volta.

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IXTC200N085T Page 1 IXTC200N085T Page 2

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