Datasheet Details
| Part number | IXTH11N80 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 323.53 KB |
| Description | N-Channel MOSFET |
| Datasheet | IXTH11N80-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | IXTH11N80 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 323.53 KB |
| Description | N-Channel MOSFET |
| Datasheet | IXTH11N80-INCHANGE.pdf |
|
|
|
·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 800 V ±20 V 11 A 44 A 300 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.42 UNIT ℃/W IXTH11N80 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
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|---|---|---|---|
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IXTH11N80 | MegaMOS FET | IXYS |
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