Datasheet4U Logo Datasheet4U.com

IXTM6N80 Datasheet - INCHANGE

N-Channel MOSFET

IXTM6N80 Features

* Drain Source Voltage- : VDSS= 800V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max)

* Fast Switching

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATIONS

* Switch-Mode and Resonant-Mode Power

IXTM6N80 Datasheet (263.32 KB)

Preview of IXTM6N80 PDF

Datasheet Details

Part number:

IXTM6N80

Manufacturer:

INCHANGE

File Size:

263.32 KB

Description:

N-channel mosfet.

📁 Related Datasheet

IXTM6N80 Power MOSFET (IXYS)

IXTM6N80A Power MOSFET (IXYS)

IXTM6N80A N-Channel MOSFET (INCHANGE)

IXTM6N90 Standard Power MOSFET (IXYS Corporation)

IXTM6N90 N-Channel MOSFET (INCHANGE)

IXTM6N90A Standard Power MOSFET (IXYS Corporation)

IXTM6N90A N-Channel MOSFET (INCHANGE)

IXTM67N10 N-Channel MOSFET (IXYS Corporation)

IXTM67N10 N-Channel MOSFET (INCHANGE)

IXTM10N100 MOSFET (IXYS Corporation)

TAGS

IXTM6N80 N-Channel MOSFET INCHANGE

Image Gallery

IXTM6N80 Datasheet Preview Page 2

IXTM6N80 Distributor