IXTP12N65X2M mosfet equivalent, n-channel mosfet.
*High power dissipation
*Static drain-source on-resistance:
RDS(on) ≤ 300mΩ@VGS=10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust devic.
of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .
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