IXTP60N10T mosfet equivalent, n-channel mosfet.
*Static drain-source on-resistance:
RDS(on) ≤ 18mΩ@VGS=10V
*Fully characterized avalanche voltage and current
*100% avalanche tested
*Minimum Lot-to-Lot v.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Volt.
Image gallery
Download