IXTP80N12T2 - N-Channel MOSFET

Datasheet Summary

Features

Drain-Source On-Resistance: RDS(on).

INCHANGE

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Datasheet Details

Part number	IXTP80N12T2
Manufacturer	INCHANGE
File Size	202.34 KB
Description	N-Channel MOSFET
Datasheet	IXTP80N12T2 Datasheet
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isc N-Channel MOSFET Transistor ·FEATURES ·Drain-Source On-Resistance: RDS(on)<17mΩ ·With TO-220 packaging ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications INCHANGE Semiconductor IXTP80N12T2 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 10.4 6.

Published: Sep 3, 2020 |