IXTP8N65X2M mosfet equivalent, n-channel mosfet.
*High power dissipation
*Static drain-source on-resistance:
RDS(on) ≤ 550mΩ@VGS=10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust devic.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGS
Gate-Source Volt.
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