IXTQ50N20P
Overview
- Drain Source Voltage- : VDSS= 200V(Min)
- Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max)
- Fast Switching
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IXTQ50N20P |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 252.13 KB |
Related Datasheets
- IXTQ50N25T — IXYS — Trench Gate Power MOSFET