IXTU1R4N60P
Overview
- Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V
- Fully characterized avalanche voltage and current
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IXTU1R4N60P |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 270.12 KB |
Related Datasheets
- IXTU1R4N60P — IXYS — Power MOSFET