IXTV30N60P N-Channel MOSFET

INCHANGE

IXTV30N60P Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTV30N60P *.

IXTV30N60P Features

* With TO-3PN packaging
* With low gate drive requirements
* Easy to drive
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXTV30N60P Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 80 PD Total Dissipation 540 Tj Operating Junction Temperature -55~1

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IXTV30N60P Datasheet Preview — Preview of IXTV30N60P PDF

Datasheet Details

Part number: IXTV30N60P
Manufacturer: INCHANGE
File Size: 228.21 KB
Datasheet: IXTV30N60P-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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