IXTV86N25T
Overview
- Drain Source Voltage- : VDSS= 250V(Min)
- Static Drain-Source On-Resistance : RDS(on) = 37mΩ(Max)
- Fast Switching
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IXTV86N25T |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 246.32 KB |
Related Datasheets
- IXTV86N25T — IXYS — Power MOSFET