Datasheet Details
| Part number | IXTY26P10T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 257.34 KB |
| Description | P-Channel MOSFET |
| Datasheet | IXTY26P10T-INCHANGE.pdf |
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Overview: isc P-Channel MOSFET Transistor ·.
| Part number | IXTY26P10T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 257.34 KB |
| Description | P-Channel MOSFET |
| Datasheet | IXTY26P10T-INCHANGE.pdf |
|
|
|
·High side switching ·Push pull amplifiers ·Current regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±15 V ID Drain Current-Continuous -26 A IDM Drain Current-Single Pulsed -80 A PD Total Dissipation @TC=25℃ 150 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX UNIT 0.83 ℃/W 62 ℃/W IXTY26P10T isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID= -250μA VGS(th) Gate Threshold Voltage VDS=VGS;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IXTY26P10T | Power MOSFET | IXYS |
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