IXTY4N65X2
Overview
- Static drain-source on-resistance: RDS(on) ≤ 850mΩ@VGS=10V
- Fully characterized avalanche voltage and current
- 100% Avalanche Tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IXTY4N65X2 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 261.31 KB |
Related Datasheets
- IXTY4N65X2 — IXYS — Power MOSFET