Download JCS2N60F Datasheet PDF
Inchange Semiconductor
JCS2N60F
JCS2N60F is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES - Low gate charge - High speed switching - Low on-resistance - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - High frequency switching mode power supply - Electronic ballast - UPS - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 2.0 1.3 Total Dissipation Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 5.5 62.5 UNIT ℃/W ℃/W isc website:.iscsemi.cn...