Datasheet Details
| Part number | JST41Z-1200BW |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 147.11 KB |
| Description | Thyristor |
| Datasheet | JST41Z-1200BW-INCHANGE.pdf |
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Overview: isc Thyristors JST41Z-1200BW.
| Part number | JST41Z-1200BW |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 147.11 KB |
| Description | Thyristor |
| Datasheet | JST41Z-1200BW-INCHANGE.pdf |
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·With TO-3PN packaging ·Insulated package ·Can be operated in 3 quadrants ·Advanced technology to provide customers with high commutation performances ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(RSM) Repetitive peak reverse voltage Average on-state current Tc=75℃ ITSM Surge non-repetitive on-state current 50HZ PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX 1200 1200 40 UNIT V V A 400 A 1 W -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated;
Tj=25℃ IDRM Repetitive peak off-state current VD=VDRM Rated;
Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=60A；tP=380μs Ⅰ VD =12V;RL=33Ω;
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| Part Number | Description |
|---|---|
| JST41S-1200BW | Thyristor |