K3568 - N-Channel MOSFET

Features

Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V.
Low leakage current: IDSS.

INCHANGE

Datasheet Details

Part number	K3568
Manufacturer	INCHANGE
File Size	249.11 KB
Description	N-Channel MOSFET
Datasheet	K3568 Datasheet
Additional preview pages of the K3568 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS <100 µA @VDS = 500 V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Regulator Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 48 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 3.125 UNIT ℃/W 2SK3568 isc website：www.iscsemi.

Published: Dec 14, 2021 |