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KSA1220 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

General Description

·Low Collector Saturation Voltage ·High voltage ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching ·Low power switching regulator ·DC-DC converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.2 A 1.2 w 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;

IB= -200mA VBE(sat) Collector-Emitter Saturation Voltage IC= -1A;

IB= -200mA ICBO Collector Cutoff Current VCB= -120V;

Overview

isc Silicon PNP Power Transistor KSA1220.