Datasheet Details
| Part number | KSB1017 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.05 KB |
| Description | PNP Transistor |
| Download | KSB1017 Download (PDF) |
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| Part number | KSB1017 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.05 KB |
| Description | PNP Transistor |
| Download | KSB1017 Download (PDF) |
|
|
|
·Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type KSD1408 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
·Recommended for 20~25W high-fidelity audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.4 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KSB1017 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
isc Silicon PNP Power Transistor KSB1017.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSB1017 | PNP Silicon Epitaxial Transistor | Fairchild Semiconductor |
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