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KSB1017 - PNP Transistor

Description

Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@IC= -3A Good Linearity of hFE Complement to Type KSD1408 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applicati

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Datasheet Details

Part number KSB1017
Manufacturer INCHANGE
File Size 192.05 KB
Description PNP Transistor
Datasheet download datasheet KSB1017 Datasheet
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isc Silicon PNP Power Transistor KSB1017 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type KSD1408 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 20~25W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
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