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KSB1097 - PNP Transistor

Description

High Collector Current:IC= -7A Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

low speed switching applications.

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Datasheet Details

Part number KSB1097
Manufacturer INCHANGE
File Size 190.76 KB
Description PNP Transistor
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Full PDF Text Transcription

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current:IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifiers and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Total Power Dissipation @ Ta=25℃ Total Power Dissipation @ TC=25℃ Junction Temperature -80 V -60 V -7 V -7 A -15 A -3.5 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSB1097 isc website：www.iscsemi.
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