Datasheet Details
| Part number | KSB1097 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.76 KB |
| Description | PNP Transistor |
| Download | KSB1097 Download (PDF) |
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| Part number | KSB1097 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.76 KB |
| Description | PNP Transistor |
| Download | KSB1097 Download (PDF) |
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·High Collector Current:IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifiers and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Total Power Dissipation @ Ta=25℃ Total Power Dissipation @ TC=25℃ Junction Temperature -80 V -60 V -7 V -7 A -15 A -3.5 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSB1097 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSB1097 | Low Frequency Power Amplifier | Fairchild Semiconductor |
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