Datasheet4U Logo Datasheet4U.com

KSB601 - PNP Transistor

Description

High DC Current Gain- : hFE = 2000(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KSB601 Low Frequency Power Amplifier Fairchild Semiconductor
KSB Low-profile Tact Switch ITT Industries
KSB-0 Low-profile Tact Switch ITT Industries
KSB-1 Low-profile Tact Switch ITT Industries
KSB0505HA-G303 DC FAN DELTA

Other Datasheets by Inchange Semiconductor

Part Number Description
KSB1015 PNP Transistor
KSB1017 PNP Transistor
KSB1097 PNP Transistor
KSB1151 PNP Transistor
KSB1366 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Darlington Power Transistor KSB601 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-frequency power amplifiers and low- speed switching applications. ·Ideal for use in direct drive from IC output for magnet drivers such as terminal equipment or cash registers.
Published: |