Datasheet Details
| Part number | KSC2682 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.01 KB |
| Description | NPN Transistor |
| Download | KSC2682 Download (PDF) |
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| Part number | KSC2682 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.01 KB |
| Description | NPN Transistor |
| Download | KSC2682 Download (PDF) |
|
|
|
·High voltage ·Low Saturation Voltage ·Complementary to KSA1142 PNP transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The KSC2682 is designed for use in audio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCER Collector-Emitter Voltage RBE=150Ω 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 0.1 A 8 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSC2682 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=50mA;
IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC=50mA;
IB= 5mA ICBO Collector Cutoff Current VCB= 180V ;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSC2682 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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