KSC3503 Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base breakdown voltage IC=1mA ; IB=0 V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA.