Datasheet Details
| Part number | KSC5027F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.57 KB |
| Description | NPN Transistor |
| Datasheet | KSC5027F-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | KSC5027F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.57 KB |
| Description | NPN Transistor |
| Datasheet | KSC5027F-INCHANGE.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSC5027F isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.5A;
IB= 0.3A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
Compare KSC5027F distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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