Datasheet Details
| Part number | KSD1588 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.25 KB |
| Description | NPN Transistor |
| Download | KSD1588 Download (PDF) |
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| Part number | KSD1588 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.25 KB |
| Description | NPN Transistor |
| Download | KSD1588 Download (PDF) |
|
|
|
·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Complement to Type KSB1097 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
isc Silicon NPN Power Transistor KSD1588.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSD1588 | Low Frequency Power Amplifier | Fairchild Semiconductor |
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