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KSD1588 - NPN Transistor

Description

Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) Complement to Type KSB1097 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier app

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Datasheet Details

Part number KSD1588
Manufacturer INCHANGE
File Size 179.25 KB
Description NPN Transistor
Datasheet download datasheet KSD1588 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor KSD1588 DESCRIPTION ·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Complement to Type KSB1097 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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