Datasheet Details
| Part number | KSD880 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.71 KB |
| Description | NPN Transistor |
| Datasheet | KSD880-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor KSD880.
| Part number | KSD880 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.71 KB |
| Description | NPN Transistor |
| Datasheet | KSD880-INCHANGE.pdf |
|
|
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·Collector-Emitter sustaining Voltage : VCEO=60V(Min) ·Good Linearity of hFE ·Complement to KSB834 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Linear and switching industrial applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 0.3 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(sus) Collector-Emitter Breakdown Voltage IC=50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
IB= 0.3A VBE(on) Base-Emitter OnVoltage IC= 0.5A;
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