Download KSE340 Datasheet PDF
Inchange Semiconductor
KSE340
DESCRIPTION - High Collector-Emitter breakdown voltage - Low Collector Saturation Voltage - plement to Type KSE350 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - High voltage general purpose applications - Suitable for transform ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ Junction Temperature 20 W ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power...