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KSE340 - NPN Transistor

General Description

High Collector-Emitter breakdown voltage Low Collector Saturation Voltage Complement to Type KSE350 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage general purpose applications Suitable for transform ABSOLUT

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isc Silicon NPN Power Transistor KSE340 DESCRIPTION ·High Collector-Emitter breakdown voltage ·Low Collector Saturation Voltage ·Complement to Type KSE350 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage general purpose applications ·Suitable for transform ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.5 A 20 W 1.3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.