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KSE44H2 - NPN Transistor

Download the KSE44H2 datasheet PDF. This datasheet also covers the KSE44H1 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (KSE44H1-INCHANGE.pdf) that lists specifications for multiple related part numbers.

General Description

·Low Saturation Voltage ·Fast Switching Speeds ·Complement to Type KSE45H Series ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT KSE44H 1,2 30 VCEO Collector-Emitter Voltage KSE44H 4,5 KSE44H 7,8 45 60 V KSE44H 10,11 80 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Pa Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 20 A 50 W 1.67 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor KSE44H Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage KSE44H1,4,7,10 KSE44H2,5,8,11 VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current KSE44H1,4,7,10 hFE DC Current Gain KSE44H2,5,8,11 COB Output Capacitance fT Current-Gain—Bandwidth Product CONDITIONS MIN TYP MAX UNIT IC= 8A ;IB= 0.8 A IC= 8A ;IB= 0.4 A 1 V IC= 8A ;IB= 0.8 A 1.5 V VCE=Rated VCEO;

10 μA VEB= 5V;

IC= 0 100 μA 35 IC= 2A ;

Overview

isc Silicon NPN Power Transistors INCHANGE Semiconductor KSE44H.