Datasheet Details
| Part number | KSE45H11 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 258.64 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | KSE45H11-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor KSE45H11.
| Part number | KSE45H11 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 258.64 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | KSE45H11-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 60(Min)@ (VCE= -1V, IC= -2A) ·Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -8A, IB= -0.4A) ·Complement to Type KSE44H11 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as a driver in DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICP Collector Current-Pulse PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -20 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO * Collector-Emitter Breakdown Voltage VCE(sat) VBE(sat) ICEO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain *:Pulse test PW≤300us,duty cycle≤2% CONDITIONS IC= -30mA;
IB= 0 IC= -8A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KSE45H11 | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
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