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KSE700 - PNP Transistor

Description

High DC current gain Low Collector Saturation Voltage Complement to Type KSE800 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Monolithic construction with built-in-Base-Emitter resistor ABSOLUTE M

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isc Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Low Collector Saturation Voltage ·Complement to Type KSE800 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Monolithic construction with built-in-Base-Emitter resistor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -4 A 40 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSE700 isc website：www.iscsemi.
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