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INCHANGE

KSH44H11 Datasheet Preview

KSH44H11 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
KSH44H11
DESCRIPTION
·Lead formed for surface mount applications(NO suffix)
·Straight lead(IPAK,“-Isuffix)
·Electrically similar to popular KSE44H
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·Power amplifier
·Converters
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current-Pulse
PC
Total Power Dissipation
@ Ta=25
PC
Total Power Dissipation
@ TC=25
TJ
Junction Temperature
16
A
1.75
W
20
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

KSH44H11 Datasheet Preview

KSH44H11 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
KSH44H11
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO * Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat)
VBE(sat)
ICEO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC=8A; IB= 400mA
IC=8A; IB= 800mA
VCE= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE1
DC Current Gain
hFE2
DC Current Gain
IC= 2A; VCE= 1V
IC= 4A; VCE= 1V
fT
Current-Gain—Bandwidth Product
*:Pulse test PW≤300us,duty cycle≤2%
IC= 0.5A; VCE= 10V
MIN
TYP MAX UNIT
80
V
1.0
V
1.5
V
10
uA
50
uA
60
40
50
MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number KSH44H11
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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KSH44H11 Datasheet PDF





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