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KSH44H11I Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor KSH44H11I.

General Description

·Straight lead(IPAK,“-I”suffix) ·Electrically similar to popular KSE44H ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Power amplifier ·Converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Pulse Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ MAX.Junction Temperature 16 A 1.75 W 20 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor KSH44H11I ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC= 30mA;

IB= 0 VCE(sat) VBE(sat) ICEO Collector-Emitter Saturation Voltage IC=8A;

IB= 400mA Base-Emitter Saturation Voltage IC=8A;

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