isc Silicon PNP Power Transistor
INCHANGE Semiconductor
KSH45H11I
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO * Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat)
VBE(sat)
ICEO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC=-8A; IB= -400mA
IC=-8A; IB= -800mA
VCE=- 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB=- 5V; IC= 0
hFE1
DC Current Gain
hFE2
DC Current Gain
IC= -2A; VCE= -1V
IC=- 4A; VCE= -1V
fT
Current-Gain—Bandwidth Product
IC=- 0.5A; VCE= -10V
MIN TYP MAX UNIT
-80
V
-1.0
V
-1.5
V
-10
uA
-50
uA
60
40
40
MHz
COB
Output Capacitance
*:Pulse test PW≤300us,duty cycle≤2%
IE= 0 ; VCB= -10V,ftest= 1MHz
230
pF
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notification. The information contained herein is presented only as a guide for the applications of
our products.
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