Datasheet Details
| Part number | KT815A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.17 KB |
| Description | NPN Transistor |
| Download | KT815A Download (PDF) |
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| Part number | KT815A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.17 KB |
| Description | NPN Transistor |
| Download | KT815A Download (PDF) |
|
|
|
·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 A 10 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KT815A isc website： www.iscsemi.com 1 isc&iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA ;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 100μA ;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KT815A | Transistors | Integral |
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KT815 | NPN Transistor | Integral |
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KT8156 | NPN Transistor | Integral |
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KT8159 | PNP Transistor | Integral |
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KT8159A | PNP Transistor | Integral |
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| KT8232A1 | NPN Transistor |
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