KT815A Description
·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage- : 1 isc&iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA.